In 2008, SCST has made more than ten breakthroughs in developing and improving of equipments, process techniques, energy-saving etc. We also developed complete hot zone systems of 12”, 14”, 16”, 18”, 20”, 22”, and 24”. The successful development of 20”, 22”, and 24” hot zone systems enable us to manufacture not only 3”, 4”, 5”, and 6” ingots, but also 8” and 12” ingots in mass production. We have mastered the technique of growing dislocation-free mono crystal ingots. SCST has also made several achievements to maximize the performance of equipments and to save energy. For instance, when a 22” hot zone is installed in the puller with the inner diameter of 850mm, the power consumption of equal-diameter process is controlled to be 50KW.

Currently we have 40 crystal pullers which adopt 20" and 22” hot zone with 90-120kg crucible charge. These pullers are designed for producing both 6” and 8” ingots. In addition, we will install 60 more pullers adopting 22” and 24” hot zone with 120-175kg charge. Some of them were designed for producing 12” ingots. We are developing advanced process techniques for mass production of 210*210mm solar wafers.

Several of our technical achievements have been approved for patents of invention.

Left side is 6 inch free dislocation ingots; equal-diameter length is 2000mm. Right side is 8 inch free dislocation ingots, equal-diameter length is 2130mm, and weight is 170kg

12 inch free dislocation ingots, equal-diameter length is 830mm, weight is around 170kg

To achieve 12 inch sample wafer by CR100 cropping saw

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