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单晶硅方棒技术规格
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编号
NO.
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项目
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规格
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单位UNITS
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ITEMS
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SPECIFICATIONS
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1
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拉制方式
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CZ
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Growing Method
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2
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材 料
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单晶硅
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Material
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Monocrystalline Silicon
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3
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导电类型&掺杂剂
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P/Boron or N/phosphorus
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Type & Dopant
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4
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硅片尺寸
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125*125
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156*156
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mm
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Wafer Size
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（见硅片页面）
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(See wafer page)
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5
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直径
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150,160,165
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200
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mm
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Diameter
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6
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垂直度
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90±0.3
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deg
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Perpendicularity
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7
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长度
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100---500
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mm
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Length
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8
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电阻率
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P-type : 1 - 3
N-type : specified by customer
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Ω·cm
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Resistivity
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9
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少子寿命
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P-type : ≥ 10
N-type : ≥ 1000
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μs
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Minority Carrier Life
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10
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晶向
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＜100＞ ±2.0
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deg
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Orientation
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11
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位错密度
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≤ 3000
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pcs/cm2
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Dislocation Density
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12
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氧含量
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≤ 1*1018 (ASTM F121-83)
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atoms/cm3
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Oxygen Content
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13
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碳含量
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≤ 5*1016 (ASTM F123-83)
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atoms/cm3
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Carbon Content
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